Sub-20 nm gate length FinFET design: Can high-κ spacers make a difference?
Sachid, A.B., Francis, R., Baghini, M.S., Sharma, D.K., Bach, K.-H., Mahnkopf, R., Rao, V.R.
Published in 2008 IEEE International Electron Devices Meeting (01.12.2008)
Published in 2008 IEEE International Electron Devices Meeting (01.12.2008)
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