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Metal-organic-vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes
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汪莱 杨迪 郝智彪 罗毅
Published in
Chinese physics B
(01.06.2015)
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Improved Photoluminescence in InGaN/GaN Strained Quantum Wells
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丁立贞 陈弘 何苗 江洋 卢太平 邓震 陈芳胜 杨帆 杨旗 张玉力
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Chinese physics letters
(01.07.2014)
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Improvement in a-plane GaN crystalline quality using wet etching method
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曹荣涛 许晟瑞 张进成 赵一 薛军帅 哈微 张帅 崔培水 温慧娟 陈兴
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Chinese physics B
(01.04.2014)
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Method of manufacturing optical semiconductor device
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YASUTAKA SAKATA
Year of Publication
29.09.2004
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Method for improving guality of GaMnN ferromagnetic film crystal prepared via hydride vapour phase epitaxy process
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YINGYI YU
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RONG ZHANG
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XIANGQIAN XIU
Year of Publication
15.12.2004
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Method for making compound semiconductor layer activate to be p-type compound semiconductor layer
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SHIN HYUN-EOI
Year of Publication
07.04.2004
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