Search Results - 电流崩塌 :: K.UTB vyhledávací portál

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使用电流崩塌的后沿检测器

Year of Publication 30.07.2019

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Patent

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可改善电流崩塌效应的GaN HEMT

Year of Publication 12.03.2019

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Patent

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一种抑制电流崩塌效应的增强型HEMT器件及其制备方法

Year of Publication 23.08.2019

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氮掺杂对氢终端金刚石射频器件特性的影响

by 刘晓晨, 郁鑫鑫, 葛新岗, 姜龙, 李义锋, 安晓明, 郭辉
Published in 人工晶体学报 (01.11.2021)

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GaN器件kink效应建模研究

by 王帅, 成爱强, 葛晨, 陈敦军, 刘军, 丁大志
Published in 红外与毫米波学报 (2024)

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应用于宽带的AlGaN/GaN MIS-HEMT高效率器件

by 陈晓娟, 张昇, 张一川, 李艳奎, 高润华, 刘新宇, 魏珂
Published in 红外与毫米波学报 (2023)

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基于阻挡块调制结构的功率晶体管及其制作方法

Year of Publication 04.07.2025

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Patent

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一种与Si-CMOS工艺兼容的AlGaN/GaN异质结HEMT器件及其制作方法

Year of Publication 24.01.2025

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一种增强型氮化物场效应晶体管

Year of Publication 26.04.2024

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硅衬底GaN半导体器件外延材料结构

Year of Publication 29.01.2021

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Patent

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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

by HAYASAKA AKIHIRO
Year of Publication 04.03.2025

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Semiconductor device

by YOSHIDA SHIGEKI
Year of Publication 04.03.2025

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Patent

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异质结功率器件及其制作方法

Year of Publication 10.02.2023

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Patent

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Semiconductor epitaxial structure and preparation method thereof

by CHEN SHUAI, FU RUQI, YE NIANCI, ZHOU YILUN
Year of Publication 19.03.2024

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氮化镓射频峰值电流、脉外平均电流及效率的获取方法

Year of Publication 03.06.2025

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Patent

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一种结型栅GaN HEMT器件及其制备方法

Year of Publication 18.07.2025

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Patent

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Silicon-based thin film containing periodically-doped aluminum gallium nitride step buffer layer and preparation method of silicon-based thin film

by WANG HONG, WANG KAI, LIU HONGXIN
Year of Publication 07.05.2024

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GaN-based HEMT device with gate terminal extension structure and preparation method of GaN-based HEMT device

by WU YANLIN, WEI JIN, CUI JIAWEI
Year of Publication 29.03.2024

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一种基于悬空栅工艺的氮化镓器件及其制造方法

Year of Publication 22.07.2025

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Semiconductor device, manufacturing method thereof and terminal equipment

by LE LINGCONG, DAI SHUJUN, LI XIAOGANG
Year of Publication 22.08.2023

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Patent

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