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一种确定GaN晶体管纳米尺寸栅长二维电子气面密度的方法

Year of Publication 30.01.2024

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一种可调节灵敏度的等离子体磁场光学测量装置及方法

Year of Publication 16.05.2023

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Properties of the magnetopolaron in a triangular quantum well

by 李亚利单淑萍
Published in Journal of semiconductors (01.08.2015)

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Properties of polaron in a triangular quantum well induced by the Rashba effect

by 张海瑞孙勇
Published in Journal of semiconductors (01.10.2014)

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一种基于法拉第旋光的高灵敏度磁场测量装置及方法

Year of Publication 09.12.2022

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Patent

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プラズマ電子密度測定用の面状共振素子並びにプラズマ電子密度測定方法及び装置

Year of Publication 12.03.2009

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种高可靠AlGaN/GaN异质结构设计方法

Year of Publication 24.10.2017

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AlGaN/GaN HEMT中的AlGaN势垒层及其生长方法

Year of Publication 17.05.2024

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AlGaN barrier layer in AlGaN/GaN HEMT and growth method of AlGaN barrier layer

by FU YI, ZHOU MINGBING
Year of Publication 05.05.2020

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GaN HEMT源漏通道区电阻的自热和准饱和效应模型

by 姚若河, 姚永康, 耿魁伟
Published in 华南理工大学学报（自然科学版） (01.07.2024)

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锂电池涂布横向面密度的控制方法、装置及电子设备

Year of Publication 10.05.2024

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Patent

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可动离子电荷面密度的测试方法及装置、电子设备和介质

Year of Publication 12.05.2023

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面密度测量补偿系统

Year of Publication 22.02.2022

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密度泛函理论研究十二烷硫醇在Au（111）面上的吸附

by 范晓丽冉润欣张超杨永良
Published in 物理化学学报 (2013)

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原子軌道電子密度集合の3D描画モジュールEDENSASの開発

by 山本, 茂義, 宮崎, 慎也, 秦野, 甯世, 中, 貴俊
Published in Journal of Computer Chemistry, Japan (2011)

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Temperature effects on interface polarons in a strained （111）-oriented zinc-blende GaN/AlGaN heterojunction under pressure

by 张敏班士良
Published in Journal of semiconductors (2009)

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GaAs基InAs/AlSb二维电子气结构的生长优化

by 崔晓然, 吕红亮, 李金伦, 苏向斌, 徐应强, 牛智川
Published in 红外与毫米波学报 (2018)

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Method for determining nanoscale gate length two-dimensional electron gas surface density of GaN transistor

by HAN JISHENG, XU XIANGANG, ZHONG YU, LI HANHE, CUI PENG, XU MINGSHENG, LI SHUQIANG, CUI YINGXIN, CHEN SIHENG
Year of Publication 22.08.2023

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Self-supporting membrane electrode, battery and vehicle

by LU QINGWEI, LI ZIYU, WANG DEPING, ZHANG XINGRUI, RONG CHANGRU, SUN HUANLI
Year of Publication 16.07.2021

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半导体元件

Year of Publication 02.06.2023

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Patent

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