Impact of Ion Implantation on Quantum Dot Heterostructures and Devices

This book looks at the effects of ion implantation as an effective post-growth technique to improve the material properties, and ultimately, the device performance of In(Ga)As/GaAs quantum dot (QD) heterostructures. Over the past two decades, In(Ga)As/GaAs-based QD heterostructures have marked their...

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Bibliographic Details
Main Authors Mandal, Arjun (Author), Chakrabarti, Subhananda (Author)
Corporate Author SpringerLink (Online service)
Format Electronic eBook
LanguageEnglish
Published Singapore : Springer Singapore : Imprint: Springer, 2017.
Subjects
Materials science.
Electronic circuits.
Optical materials.
Electronic materials.
elektronické knihy
electronic books
Online AccessPlný text

Cover

Table of Contents:
  • Preface
  • Acknowledgement
  • Contents
  • List of Figures
  • List of Tables
  • Abbreviations
  • Chapter 1: Introduction to Quantum Dots
  • Chapter 2: Low energy ion implantation over single layer InAs/GaAs quantum dots
  • Chapter 3: Optimizations for quaternary alloy (InAlGaAs) capped InAs/GaAs multilayer quantum dots
  • Chapter 4: Effects of low energy light ion (H−) implantations on quaternary-alloy-capped InAs/GaAs quantum dot infrared photodetectors
  • Chapter 5: Effects of low energy light ion (H−) implantation on quaternary-alloy-capped InGaAs/GaAs quantum dot infrared photodetectors.

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